v ds = 25v r ds(on), vgs@10v , ids@30a = 8.5mw r ds(on), vgs@4.5v, ids@30a = 13mw features advanced trench process technology high density cell design for ultra low on-resistance specially designed for dc/dc converters and motor drivers fully characterized avalanche voltage and current maximum ratings and thermal characteristics (t a = 25 o c unless otherwise noted) symbol limit unit v ds 25 v gs + 20 i d 35 i dm 350 t a = 25 o c 57 t a = 100 o c 23 t j , t stg -55 to 150 o c e as 300 mj r q j c 2.2 junction-to-ambient thermal resistance (pcb mounted) r q ja 50 note: 1. maximum dc current limited by the package 2. 1-in 2oz cu pcb board avalanche energy with single pulse i d =35a, v dd =25v, l=0.5mh operating junction and storage temperature range continuous drain current gate-source voltage maximum power dissipation o c/w junction-to-case thermal resistance parameter v a w drain-source voltage p d pulsed drain current 1) 2) 2 to-252 ( ( (dpack) FMD35N02 25v n-channel enhancement-mode mosfet
electrical characteristics parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d = 250ua 25 - - v drain-source on-state resistance r ds(on) v gs = 4.5v, i d = 30a 10.0 13 drain-source on-state resistance r ds(on) v gs = 10v, i d = 30a 6.5 8.5 gate threshold voltage v gs(th) v ds =v gs , i d = 250ua 1 1.6 3 v zero gate voltage drain current i dss v ds = 24v, v gs = 0v 1 ua gate body leakage i gss v gs = + 20 v, v ds = 0v + 10 0 na gate resistance rg forward transconductance g fs v ds = 10v, i d = 35a s dynamic total gate charge q g 24 gate-source charge q gs 5.4 gate-drain charge q gd 4.0 turn-on delay time t d(on) 15.0 turn-on rise time t r 3.2 turn-off delay time t d(off) 36 turn-off fall time t f 4.8 input capacitance c iss 1940 output capacitance c oss 312 reverse transfer capacitance c rss 122 source-drain diode max. diode forward current i s 50 a diode forward voltage v sd i s = 20a, v gs = 0v 0.87 1.5 v note : pulse test: pulse width <= 300us, duty cycle<= 2% nc v ds = 15v, v gs = 0v f = 1.0 mhz pf m w v ds = 15v, i d = 35a v gs = 10v v dd = 15v, r l = 15 w i d = 1a, v gen = 10v r g = 24 w ns FMD35N02 25v n-channel enhancement-mode
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